Resistiveswitching相关论文
Demonstration of synaptic and resistive switching characteristics in W/TiO2/HfO2/TaN memristor cross
In this study,resistive random-access memory (RRAM)-based crossbar arrays with a memristor W/TiO2/HfO2/TaN structure wer......
The special any-polar resistive switching mode includes the coexistence and stable conversion between the unipolar and t......
Since it was proposed,memtransistors have been a leading candidate with powerful capabilities in the field of neural mor......
Fabrication and Properties of Ag/Mg0.2Zn0.80/La0.67Ca0.33MnO/p+-Si Resistive Switching Heterostructu
Mg0.2Zn0.8O (MZO)/La0.67Ca0.33MnO (LCMO) heterostructure was deposited on p+-Si substrates by sol-gel spin coating techn......
In recent years, HfO2 has attracted considerable attentions for its application in resistance random access memory (RRAM......
The resistive switching memory (RRAM) is one of the most promising candidate for future high-density non-volatile storag......
...
Bipolar and Unipolar Resistive Switching Respectively in Ag/TiO2/Pt and Au/TiO2/Pt Stacked Structure
...
The unique complementary switching behaviour of complementary resistive switches(CRSs)makes them very attractive for log......
Resistive switching behaviour has been intensively studied in oxides[1,2].In oxides,it is well known that oxygen vacanci......
In recent years,resistive switching(RS)effect has attracted considerable attention due to its scientific interest and im......
Tunneling magnetoresistance induced by controllable formation of Co filaments in resistive switching
Magnetic tunnel junctions(MTJs),i.e.,a sandwich of two ferromagnetic electrodes separated by a thin insulating barrier,h......
The effect of interfacial and intrinsic properties of electrodes on the resistive switching of ZnO f
RRAM,which depends on the electrically switchable resistance based on ionic motion to store and process information,is r......
...
In this work,nonvolatile bipolar resistive switching behaviors have been observed in ferroelectric Au/BaTiO3/La0.67Sr0.3......
Organic–inorganic hybrid perovskites,which attract tremendous attention due to heir incredible rise in power conver......
Low energy dissipation makes resistive random access memory(RRAM)a very interesting non-volatile storage media for w......
Metal-oxide electrochemical metallization （ECM） memory is a promising candidate for the next generation nonvolatile memory......
Resistive switching performance improvement of InGaZnO-based memory device by nitrogen plasma treatm
With the demand of flat panel display development,utilizing the non-volatile memory devices based on indium-gallium-zinc......
